IPI12CN10NG Todos los transistores

 

IPI12CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI12CN10NG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 489 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0129 Ohm
   Paquete / Cubierta: TO-262
 

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IPI12CN10NG Datasheet (PDF)

 ..1. Size:858K  infineon
 ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf pdf_icon

IPI12CN10NG

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 ..2. Size:256K  inchange semiconductor
 ipi12cn10ng.pdf pdf_icon

IPI12CN10NG

Isc N-Channel MOSFET Transistor IPI12CN10NGFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 4.1. Size:623K  infineon
 ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf pdf_icon

IPI12CN10NG

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 7.1. Size:549K  infineon
 ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf pdf_icon

IPI12CN10NG

IPB12CNE8N G IPD12CNE8N GIPI12CNE8N G IPP12CNE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1

MOSTRAR MÁS

Otros transistores... IPI65R280E6 , IPI65R190E6 , IPI65R190CFD , IPI65R190C6 , IPI65R150CFD , IPI65R110CFD , IPI65R099C6 , IPI14N03LA , STP65NF06 , IPI100N06S3L-04 , IPI09N03LA , IPI084N06L3G , IPI04N03LA , IPI04CN10N , IPI029N06N , IPI020N06N , IPF13N03LAG .

History: WMO90R1K5S | 2SJ583LS | STB20N65M5 | NP55N055SUG | WMK18N70EM | WMO50P04T1 | WMN10N60C4

 

 
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