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IPI12CN10NG Specs and Replacement


   Type Designator: IPI12CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 67 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 489 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0129 Ohm
   Package: TO-262
 

 IPI12CN10NG substitution

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IPI12CN10NG Specs

 ..1. Size:858K  infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf pdf_icon

IPI12CN10NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM) DS(on) ID 67 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)... See More ⇒

 ..2. Size:256K  inchange semiconductor
ipi12cn10ng.pdf pdf_icon

IPI12CN10NG

Isc N-Channel MOSFET Transistor IPI12CN10NG FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒

 4.1. Size:623K  infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf pdf_icon

IPI12CN10NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒

 7.1. Size:549K  infineon
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf pdf_icon

IPI12CN10NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1... See More ⇒

Detailed specifications: IPI65R280E6 , IPI65R190E6 , IPI65R190CFD , IPI65R190C6 , IPI65R150CFD , IPI65R110CFD , IPI65R099C6 , IPI14N03LA , IRFZ46N , IPI100N06S3L-04 , IPI09N03LA , IPI084N06L3G , IPI04N03LA , IPI04CN10N , IPI029N06N , IPI020N06N , IPF13N03LAG .

Keywords - IPI12CN10NG MOSFET specs

 IPI12CN10NG cross reference
 IPI12CN10NG equivalent finder
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 IPI12CN10NG replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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