IPI12CN10NG Specs and Replacement
Type Designator: IPI12CN10NG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 67
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 489
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0129
Ohm
Package:
TO-262
-
MOSFET ⓘ Cross-Reference Search
IPI12CN10NG Specs
..1. Size:858K infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf 
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM) DS(on) ID 67 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)... See More ⇒
..2. Size:256K inchange semiconductor
ipi12cn10ng.pdf 
Isc N-Channel MOSFET Transistor IPI12CN10NG FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒
4.1. Size:623K infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf 
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒
7.1. Size:549K infineon
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf 
IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1... See More ⇒
9.1. Size:225K infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf 
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒
9.2. Size:237K infineon
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdf 
IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 3.5 mW ID -120 A Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested... See More ⇒
9.5. Size:159K infineon
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf 
IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒
9.6. Size:211K infineon
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf 
IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 4.1 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒
9.7. Size:430K infineon
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdf 
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 3.1 mW ID -120 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test... See More ⇒
9.8. Size:174K infineon
ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf 
IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒
9.9. Size:170K infineon
ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf 
IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒
9.10. Size:353K infineon
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf 
IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒
9.11. Size:164K infineon
ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf 
IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒
9.15. Size:386K infineon
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf 
IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 5.0 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒
Detailed specifications: IPI65R280E6
, IPI65R190E6
, IPI65R190CFD
, IPI65R190C6
, IPI65R150CFD
, IPI65R110CFD
, IPI65R099C6
, IPI14N03LA
, IRFZ46N
, IPI100N06S3L-04
, IPI09N03LA
, IPI084N06L3G
, IPI04N03LA
, IPI04CN10N
, IPI029N06N
, IPI020N06N
, IPF13N03LAG
.
Keywords - IPI12CN10NG MOSFET specs
IPI12CN10NG cross reference
IPI12CN10NG equivalent finder
IPI12CN10NG lookup
IPI12CN10NG substitution
IPI12CN10NG replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.