IPI084N06L3G Todos los transistores

 ..1. Size:427K  infineon
 ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf

Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max (SMD) 8.1 m Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

 9.1. Size:527K  infineon
 ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf

IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 8.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 95 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.2. Size:778K  infineon
 ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.3. Size:757K  infineon
 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.4. Size:772K  infineon
 ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8

 9.5. Size:261K  inchange semiconductor
 ipi086n10n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI086N10N3 FEATURES Static drain-source on-resistance RDS(on) 8.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(