IPI084N06L3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI084N06L3G
Marking Code: 084N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 690
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084
Ohm
Package:
TO-262
IPI084N06L3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI084N06L3G
Datasheet (PDF)
..1. Size:427K infineon
ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf 
Type IPB081N06L3 G IPP084N06L3 GIPI084N06L3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max (SMD) 8.1m Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian
9.1. Size:527K infineon
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf
IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
9.2. Size:778K infineon
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf
IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
9.3. Size:757K infineon
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf
IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
9.4. Size:772K infineon
ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf
IPB08CNE8N GIPI08CNE8N G IPP08CNE8N G 2 Power-TransistorProduct SummaryFeaturesV D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8
9.5. Size:261K inchange semiconductor
ipi086n10n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI086N10N3FEATURESStatic drain-source on-resistance:RDS(on) 8.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(
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