IPI084N06L3G Datasheet and Replacement
Type Designator: IPI084N06L3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 690 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO-262
IPI084N06L3G substitution
IPI084N06L3G Datasheet (PDF)
ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf

Type IPB081N06L3 G IPP084N06L3 GIPI084N06L3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max (SMD) 8.1m Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
Datasheet: IPI65R190C6 , IPI65R150CFD , IPI65R110CFD , IPI65R099C6 , IPI14N03LA , IPI12CN10NG , IPI100N06S3L-04 , IPI09N03LA , AON7403 , IPI04N03LA , IPI04CN10N , IPI029N06N , IPI020N06N , IPF13N03LAG , IPF135N03LG , IPF050N03LG , IPDH6N03LAG .
History: PJU7NA65
Keywords - IPI084N06L3G MOSFET datasheet
IPI084N06L3G cross reference
IPI084N06L3G equivalent finder
IPI084N06L3G lookup
IPI084N06L3G substitution
IPI084N06L3G replacement
History: PJU7NA65



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