IPI029N06N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI029N06N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: TO-262

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IPI029N06N Datasheet (PDF)

..1. Size:594K infineon
ipi029n06n.pdf

TypeIPI029N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 2.9 mW Superior thermal resistanceID 100 A N-channelQOSS nC 65 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 56 Pb-free lead plating; RoHS compliant Ha

9.1. Size:457K 1
ipp028n08n3g ipi028n08n3g.pdf

IPP028N08N3 G IPI028N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 2.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP02CN08N Pb-free lead plating; RoHS compliant Qualified ac

9.2. Size:836K infineon
ipp023ne7n3g ipi023ne7n3g.pdf

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9.3. Size:580K infineon
ipi020n06n.pdf

TypeIPI020N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 2.0 mW Superior thermal resistanceID 120 A N-channelQOSS nC 119 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant

9.4. Size:840K infineon
ipp028n08n3 ipp028n08n3g ipi028n08n3g.pdf

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9.5. Size:999K infineon
ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf

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9.6. Size:483K infineon
ipb021n06n3g ipi024n06n3g ipp024n06n3g.pdf

Type IPB021N06N3 G IPI024N06N3 GIPP024N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 2.1mDS(on),max (SMD) Optimized technology for DC/DC convertersI 120 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch

9.7. Size:846K infineon
ipp023ne7n3 ipi023ne7n31.pdf