IPD80R2K8CE Todos los transistores

 

IPD80R2K8CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD80R2K8CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-252
 

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IPD80R2K8CE Datasheet (PDF)

 ..1. Size:2275K  infineon
ipd80r2k8ce ipu80r2k8ce.pdf pdf_icon

IPD80R2K8CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 ..2. Size:243K  inchange semiconductor
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IPD80R2K8CE

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CEFEATURESStatic drain-source on-resistance:RDS(on)2.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 6.1. Size:960K  infineon
ipd80r2k4p7.pdf pdf_icon

IPD80R2K8CE

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 6.2. Size:964K  infineon
ipd80r2k0p7.pdf pdf_icon

IPD80R2K8CE

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

Otros transistores... IPI04CN10N , IPI029N06N , IPI020N06N , IPF13N03LAG , IPF135N03LG , IPF050N03LG , IPDH6N03LAG , IPDH4N03LAG , 5N50 , IPD80R1K4CE , IPD80R1K0CE , IPD65R950CFD , IPD65R950C6 , IPD65R660CFDA , IPD65R420CFDA , IPD65R420CFD , IPD65R250E6 .

History: UPA2373T1P | HMS8N65 | 12N60A | IXFK20N120 | NDP608B

 

 
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