IRFP448 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP448

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 180 W

Voltaje máximo drenador - fuente |Vds|: 500 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 11 A

Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 84(max) nC

Tiempo de subida (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 490 pF

Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm

Paquete / Cubierta: TO247AC

Búsqueda de reemplazo de MOSFET IRFP448

IRFP448 Datasheet (PDF)

..1. Size:864K international rectifier
irfp448.pdf

PD - 94899IRFP448PbF Lead-Free12/18/03Document Number: 91229 www.vishay.com1IRFP448PbFDocument Number: 91229 www.vishay.com2IRFP448PbFDocument Number: 91229 www.vishay.com3IRFP448PbFDocument Number: 91229 www.vishay.com4IRFP448PbFDocument Number: 91229 www.vishay.com5IRFP448PbFDocument Number: 91229 www.vishay.com6IRFP448PbFTO-247AC Package O

..2. Size:1629K vishay
irfp448 sihfp448.pdf

IRFP448, SiHFP448Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Compli

..3. Size:1663K vishay
irfp448pbf.pdf

IRFP448, SiHFP448Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Lead

..4. Size:1634K infineon
irfp448 sihfp448.pdf

8.1. Size:283K international rectifier
irfp4410zpbf.pdf

PD - 97309AIRFP4410ZPbFHEXFET Power MOSFETApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2m:l High Speed Power Switching max. 9.0m:l Hard Switched and High Frequency CircuitsID (Silicon Limited)97ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap

8.2. Size:296K international rectifier
irfp4468pbf.pdf

PD -97134IRFP4468PbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.6m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)290A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRu

8.3. Size:119K international rectifier
irfp449.pdf

8.4. Size:373K international rectifier
auirfp4409.pdf

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

8.5. Size:925K international rectifier
irfp440.pdf

PD - 95198IRFP440PbF Lead-Free4/27/04Document Number: 91228 www.vishay.com1IRFP440PbFDocument Number: 91228 www.vishay.com2IRFP440PbFDocument Number: 91228 www.vishay.com3IRFP440PbFDocument Number: 91228 www.vishay.com4IRFP440PbFDocument Number: 91228 www.vishay.com5IRFP440PbFDocument Number: 91228 www.vishay.com6IRFP440PbFTO-247AC Package Ou

8.6. Size:698K njs
irfp440r irfp441r irfp442r irfp443r.pdf

8.7. Size:932K samsung
irfp440a.pdf

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

8.8. Size:192K samsung
irfp440-443 irf840-843.pdf

8.9. Size:1449K vishay
irfp440pbf.pdf

IRFP440, SiHFP440Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 63COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (Pb

8.10. Size:1460K vishay
irfp440 sihfp440.pdf

IRFP440, SiHFP440Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Complian

8.11. Size:296K infineon
irfp4468pbf.pdf

8.12. Size:476K infineon
auirfp4409.pdf

8.13. Size:236K inchange semiconductor
irfp442r.pdf

isc N-Channel MOSFET Transistor IRFP442RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

8.14. Size:236K inchange semiconductor
irfp441r.pdf

isc N-Channel MOSFET Transistor IRFP441RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

8.15. Size:244K inchange semiconductor
irfp4468.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4468IIRFP4468FEATURESStatic drain-source on-resistance:RDS(on)2.6mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr

8.16. Size:237K inchange semiconductor
irfp440a.pdf

isc N-Channel MOSFET Transistor IRFP440AFEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplie

8.17. Size:243K inchange semiconductor
irfp4410z.pdf

isc N-Channel MOSFET Transistor IRFP4410ZIIRFP4410ZFEATURESStatic drain-source on-resistance:RDS(on)9.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply

8.18. Size:237K inchange semiconductor
irfp443r.pdf

isc N-Channel MOSFET Transistor IRFP443RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

8.19. Size:236K inchange semiconductor
irfp440r.pdf

isc N-Channel MOSFET Transistor IRFP440RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

Otros transistores... IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , K2611 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 .

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