IRFP448 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP448
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 84(max) nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 490 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: TO247AC
IRFP448 Datasheet (PDF)
..1. irfp448.pdf 
Size:864K _international_rectifier
PD - 94899IRFP448PbF Lead-Free12/18/03Document Number: 91229 www.vishay.com1IRFP448PbFDocument Number: 91229 www.vishay.com2IRFP448PbFDocument Number: 91229 www.vishay.com3IRFP448PbFDocument Number: 91229 www.vishay.com4IRFP448PbFDocument Number: 91229 www.vishay.com5IRFP448PbFDocument Number: 91229 www.vishay.com6IRFP448PbFTO-247AC Package O
..2. irfp448 sihfp448.pdf Size:1629K _vishay
IRFP448, SiHFP448Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Compli
..3. irfp448 sihfp448.pdf Size:1634K _infineon
IRFP448, SiHFP448Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Compli
0.1. irfp448pbf.pdf Size:1663K _vishay
IRFP448, SiHFP448Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 84 Fast SwitchingQgs (nC) 8.4 Ease of ParallelingQgd (nC) 50 Simple Drive RequirementsConfiguration Single Lead
8.1. irfp4410zpbf.pdf Size:283K _international_rectifier
PD - 97309AIRFP4410ZPbFHEXFET Power MOSFETApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2m:l High Speed Power Switching max. 9.0m:l Hard Switched and High Frequency CircuitsID (Silicon Limited)97ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Cap
8.2. irfp4468pbf.pdf Size:296K _international_rectifier
PD -97134IRFP4468PbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.6m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)290A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRu
8.3. irfp449.pdf Size:119K _international_rectifier
8.4. auirfp4409.pdf Size:373K _international_rectifier
AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
8.5. irfp440.pdf Size:925K _international_rectifier
PD - 95198IRFP440PbF Lead-Free4/27/04Document Number: 91228 www.vishay.com1IRFP440PbFDocument Number: 91228 www.vishay.com2IRFP440PbFDocument Number: 91228 www.vishay.com3IRFP440PbFDocument Number: 91228 www.vishay.com4IRFP440PbFDocument Number: 91228 www.vishay.com5IRFP440PbFDocument Number: 91228 www.vishay.com6IRFP440PbFTO-247AC Package Ou
8.6. irfp440r irfp441r irfp442r irfp443r.pdf Size:698K _njs
8.7. irfp440a.pdf Size:932K _samsung
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
8.8. irfp440-443 irf840-843.pdf Size:192K _samsung
8.9. irfp440pbf.pdf Size:1449K _vishay
IRFP440, SiHFP440Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 63COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (Pb
8.10. irfp440 sihfp440.pdf Size:1460K _vishay
IRFP440, SiHFP440Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Complian
8.11. irfp4468pbf.pdf Size:296K _infineon
PD -97134IRFP4468PbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.6m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)290A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRu
8.12. auirfp4409.pdf Size:476K _infineon
AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
8.13. irfp442r.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP442RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
8.14. irfp441r.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP441RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
8.15. irfp4468.pdf Size:244K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4468IIRFP4468FEATURESStatic drain-source on-resistance:RDS(on)2.6mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr
8.16. irfp440a.pdf Size:237K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP440AFEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplie
8.17. irfp4410z.pdf Size:243K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP4410ZIIRFP4410ZFEATURESStatic drain-source on-resistance:RDS(on)9.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply
8.18. irfp443r.pdf Size:237K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP443RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
8.19. irfp440r.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP440RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF2807 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
