IPD65R250E6 Todos los transistores

 

IPD65R250E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD65R250E6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de IPD65R250E6 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPD65R250E6 Datasheet (PDF)

 ..1. Size:1701K  infineon
 ipd65r250e6.pdf pdf_icon

IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 650V650V CoolMOS E6 Power TransistorIPD65R250E6Data SheetRev. 2.2FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPD65R250E6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpi

 ..2. Size:242K  inchange semiconductor
 ipd65r250e6.pdf pdf_icon

IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 5.1. Size:1206K  infineon
 ipd65r250c6.pdf pdf_icon

IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R250C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R250C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

 5.2. Size:242K  inchange semiconductor
 ipd65r250c6.pdf pdf_icon

IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

MOSTRAR MÁS

Otros transistores... IPD80R2K8CE , IPD80R1K4CE , IPD80R1K0CE , IPD65R950CFD , IPD65R950C6 , IPD65R660CFDA , IPD65R420CFDA , IPD65R420CFD , IRF540 , IPD65R250C6 , IPD65R225C7 , IPD65R1K4CFD , IPD65R1K4C6 , IPD65R190C7 , IPD60R800CE , IPD60R650CE , IPD60R600P6 .

History: NCEP065N10AGU | NTB150N65S3HF | 7N80G-TF1-T | IRFR4105ZTR | SM6017NSF | 2N80G-TA3-T | IRFR3709ZT

 

 
Back to Top

 


 
.