All MOSFET. IPD65R250E6 Datasheet

 

IPD65R250E6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD65R250E6
   Marking Code: 65E6250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 16.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-252

 IPD65R250E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD65R250E6 Datasheet (PDF)

 ..1. Size:1701K  infineon
 ipd65r250e6.pdf

IPD65R250E6 IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 650V650V CoolMOS E6 Power TransistorIPD65R250E6Data SheetRev. 2.2FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPD65R250E6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpi

 ..2. Size:242K  inchange semiconductor
 ipd65r250e6.pdf

IPD65R250E6 IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 5.1. Size:1206K  infineon
 ipd65r250c6.pdf

IPD65R250E6 IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R250C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R250C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

 5.2. Size:242K  inchange semiconductor
 ipd65r250c6.pdf

IPD65R250E6 IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 7.1. Size:1677K  infineon
 ipd65r225c7.pdf

IPD65R250E6 IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPD65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPD65R225C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

 7.2. Size:241K  inchange semiconductor
 ipd65r225c7.pdf

IPD65R250E6 IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7FEATURESStatic drain-source on-resistance:RDS(on)0.225Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CJ2301-HF | SH8M24

 

 
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