All MOSFET. IPD65R250E6 Datasheet

 

IPD65R250E6 Datasheet and Replacement


   Type Designator: IPD65R250E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-252
 

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IPD65R250E6 Datasheet (PDF)

 ..1. Size:1701K  infineon
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IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 650V650V CoolMOS E6 Power TransistorIPD65R250E6Data SheetRev. 2.2FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPD65R250E6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpi

 ..2. Size:242K  inchange semiconductor
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IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 5.1. Size:1206K  infineon
 ipd65r250c6.pdf pdf_icon

IPD65R250E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R250C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R250C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

 5.2. Size:242K  inchange semiconductor
 ipd65r250c6.pdf pdf_icon

IPD65R250E6

isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

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Datasheet: IPD80R2K8CE , IPD80R1K4CE , IPD80R1K0CE , IPD65R950CFD , IPD65R950C6 , IPD65R660CFDA , IPD65R420CFDA , IPD65R420CFD , IRF540N , IPD65R250C6 , IPD65R225C7 , IPD65R1K4CFD , IPD65R1K4C6 , IPD65R190C7 , IPD60R800CE , IPD60R650CE , IPD60R600P6 .

History: 1N60G-TF3-T | 1N60G-TF2-T | 1N60L-TND-R

Keywords - IPD65R250E6 MOSFET datasheet

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