IPD65R250C6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD65R250C6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: TO-252

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IPD65R250C6 datasheet

 ..1. Size:1206K  infineon
 ipd65r250c6.pdf pdf_icon

IPD65R250C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R250C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R250C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee

 ..2. Size:242K  inchange semiconductor
 ipd65r250c6.pdf pdf_icon

IPD65R250C6

isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6 FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 5.1. Size:1701K  infineon
 ipd65r250e6.pdf pdf_icon

IPD65R250C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V 650V CoolMOS E6 Power Transistor IPD65R250E6 Data Sheet Rev. 2.2 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPD65R250E6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pi

 5.2. Size:242K  inchange semiconductor
 ipd65r250e6.pdf pdf_icon

IPD65R250C6

isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6 FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

MOSTRAR MÁS

Otros transistores... IPD80R1K4CE, IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IPD65R420CFDA, IPD65R420CFD, IPD65R250E6, IRF540, IPD65R225C7, IPD65R1K4CFD, IPD65R1K4C6, IPD65R190C7, IPD60R800CE, IPD60R650CE, IPD60R600P6, IPD60R460CE