Справочник MOSFET. IPD65R250C6

 

IPD65R250C6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD65R250C6
   Маркировка: 65C6250
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IPD65R250C6

 

 

IPD65R250C6 Datasheet (PDF)

 ..1. Size:1206K  infineon
 ipd65r250c6.pdf

IPD65R250C6 IPD65R250C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R250C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R250C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

 ..2. Size:242K  inchange semiconductor
 ipd65r250c6.pdf

IPD65R250C6 IPD65R250C6

isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 5.1. Size:1701K  infineon
 ipd65r250e6.pdf

IPD65R250C6 IPD65R250C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 650V650V CoolMOS E6 Power TransistorIPD65R250E6Data SheetRev. 2.2FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPD65R250E6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpi

 5.2. Size:242K  inchange semiconductor
 ipd65r250e6.pdf

IPD65R250C6 IPD65R250C6

isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6FEATURESStatic drain-source on-resistance:RDS(on)0.25Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 7.1. Size:1677K  infineon
 ipd65r225c7.pdf

IPD65R250C6 IPD65R250C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPD65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPD65R225C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

 7.2. Size:241K  inchange semiconductor
 ipd65r225c7.pdf

IPD65R250C6 IPD65R250C6

isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7FEATURESStatic drain-source on-resistance:RDS(on)0.225Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

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