IPD65R225C7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD65R225C7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.225 Ohm

Encapsulados: TO-252

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IPD65R225C7 datasheet

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IPD65R225C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPD65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPD65R225C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

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IPD65R225C7

isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

 7.1. Size:1206K  infineon
 ipd65r250c6.pdf pdf_icon

IPD65R225C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R250C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R250C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee

 7.2. Size:1701K  infineon
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IPD65R225C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V 650V CoolMOS E6 Power Transistor IPD65R250E6 Data Sheet Rev. 2.2 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPD65R250E6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pi

MOSTRAR MÁS

Otros transistores... IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IPD65R420CFDA, IPD65R420CFD, IPD65R250E6, IPD65R250C6, 50N06, IPD65R1K4CFD, IPD65R1K4C6, IPD65R190C7, IPD60R800CE, IPD60R650CE, IPD60R600P6, IPD60R460CE, IPD60R400CE