All MOSFET. IPD65R225C7 Datasheet

 

IPD65R225C7 Datasheet and Replacement


   Type Designator: IPD65R225C7
   Marking Code: 65C7225
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: TO-252
 

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IPD65R225C7 Datasheet (PDF)

 ..1. Size:1677K  infineon
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IPD65R225C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPD65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPD65R225C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

 ..2. Size:241K  inchange semiconductor
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IPD65R225C7

isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7FEATURESStatic drain-source on-resistance:RDS(on)0.225Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 7.1. Size:1206K  infineon
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IPD65R225C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R250C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R250C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

 7.2. Size:1701K  infineon
 ipd65r250e6.pdf pdf_icon

IPD65R225C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 650V650V CoolMOS E6 Power TransistorIPD65R250E6Data SheetRev. 2.2FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPD65R250E6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpi

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History: AOD208 | UPA2719GR

Keywords - IPD65R225C7 MOSFET datasheet

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