IPD65R1K4C6 Todos los transistores

 

IPD65R1K4C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD65R1K4C6
   Código: 65C61K4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET IPD65R1K4C6

 

IPD65R1K4C6 Datasheet (PDF)

 ..1. Size:1724K  infineon
ipd65r1k4c6.pdf

IPD65R1K4C6
IPD65R1K4C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R1K4C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

 ..2. Size:242K  inchange semiconductor
ipd65r1k4c6.pdf

IPD65R1K4C6
IPD65R1K4C6

isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 4.1. Size:1133K  infineon
ipd65r1k4cfd.pdf

IPD65R1K4C6
IPD65R1K4C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDData SheetRev. 2.0Rev. 2.1, 2013-07-31FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjuncti

 4.2. Size:242K  inchange semiconductor
ipd65r1k4cfd.pdf

IPD65R1K4C6
IPD65R1K4C6

isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFDFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 6.1. Size:963K  infineon
ipd65r1k0ce.pdf

IPD65R1K4C6
IPD65R1K4C6

IPD65R1K0CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.2. Size:940K  infineon
ipd65r1k5ce.pdf

IPD65R1K4C6
IPD65R1K4C6

IPD65R1K5CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.3. Size:242K  inchange semiconductor
ipd65r1k0ce.pdf

IPD65R1K4C6
IPD65R1K4C6

isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 6.4. Size:242K  inchange semiconductor
ipd65r1k5ce.pdf

IPD65R1K4C6
IPD65R1K4C6

isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


IPD65R1K4C6
  IPD65R1K4C6
  IPD65R1K4C6
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top