IPD60R400CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPD60R400CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET IPD60R400CE

IPD60R400CE Datasheet (PDF)

..1. Size:1706K infineon
ipa60r400ce ipd60r400ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

..2. Size:1345K infineon
ipd60r400ce ips60r400ce ipa60r400ce.pdf

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

..3. Size:242K inchange semiconductor
ipd60r400ce.pdf

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

7.1. Size:2131K infineon
ipd60r450e6.pdf

MOSFET+ =L9D - PA

7.2. Size:1235K infineon
ipd60r460ce ipa60r460ce.pdf

IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

7.3. Size:1210K infineon
ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R450E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS E6 Pwer Transistr IPD60R450E6, IPP60R450E6IPA60R450E61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S )

7.4. Size:1709K infineon
ipa60r460ce ipd60r460ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

7.5. Size:242K inchange semiconductor
ipd60r450e6.pdf

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6FEATURESStatic drain-source on-resistance:RDS(on)0.45Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

7.6. Size:242K inchange semiconductor
ipd60r460ce.pdf

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CEFEATURESStatic drain-source on-resistance:RDS(on)0.46Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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