IPD60R400CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD60R400CE
Маркировка: 6R400CE
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 10.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 32 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 46 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
Тип корпуса: TO-252
Аналог (замена) для IPD60R400CE
IPD60R400CE Datasheet (PDF)
ipa60r400ce ipd60r400ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd60r400ce ips60r400ce ipa60r400ce.pdf
IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica
ipd60r400ce.pdf
isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
ipd60r460ce ipa60r460ce.pdf
IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh
ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R450E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS E6 Pwer Transistr IPD60R450E6, IPP60R450E6IPA60R450E61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S )
ipa60r460ce ipd60r460ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd60r450e6.pdf
isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6FEATURESStatic drain-source on-resistance:RDS(on)0.45Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS
ipd60r460ce.pdf
isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CEFEATURESStatic drain-source on-resistance:RDS(on)0.46Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
