IPD50R650CE Todos los transistores

 

IPD50R650CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD50R650CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-252
 

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IPD50R650CE Datasheet (PDF)

 ..1. Size:1057K  infineon
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IPD50R650CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R650CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R650CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by

 ..2. Size:242K  inchange semiconductor
ipd50r650ce.pdf pdf_icon

IPD50R650CE

isc N-Channel MOSFET Transistor IPD50R650CE,IIPD50R650CEFEATURESStatic drain-source on-resistance:RDS(on)650mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

 8.1. Size:1624K  1
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf pdf_icon

IPD50R650CE

IPD50R1K4CE, IPU50R1K4CEMOSFETDPAK IPAK500V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitiveapplications in Consumer an

 8.2. Size:2508K  infineon
ipd50r2k0ce ipu50r2k0ce.pdf pdf_icon

IPD50R650CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R2K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R2K0CE, IPU50R2K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

Otros transistores... IPD60R400CE , IPD60R380P6 , IPD60R380E6 , IPD60R2K1CE , IPD60R1K5CE , IPD60R1K0CE , IPD50R950CE , IPD50R800CE , IRFB4115 , IPD50R500CE , IPD50R3K0CE , IPD50R380CE , IPD50R2K0CE , IPD50R280CE , IPD50R1K4CE , IPD13N03LAG , IPD135N03L .

History: RU2H50R | NCEP3045GU | NCE82H110D | CHM8207JGP | P1203BKA | H5N2505DL | KMB7D0N40QA

 

 
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