IPD50R2K0CE Todos los transistores

 

IPD50R2K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD50R2K0CE

Código: 5R2K0CE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 22 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 9 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TO-252

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IPD50R2K0CE Datasheet (PDF)

1.1. ipd50r2k0ce.pdf Size:2508K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

3.1. ipd50r280ce.pdf Size:1044K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R280CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R280CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

 4.1. ipd50r800ce.pdf Size:1057K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R800CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R800CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

4.2. ipd50r399cp rev2 1b.pdf Size:658K _infineon

IPD50R2K0CE
IPD50R2K0CE

IPD50R399CP CoolMOSTM Power Transistor Product Summary Product Summary Features V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI 7G=; Qg typ 17 nC Qg typ 17 nC V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8

 4.3. ipd50r650ce.pdf Size:1057K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R650CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R650CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

4.4. ipd50r500ce.pdf Size:1046K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R500CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

 4.5. ipd50r1k4ce.pdf Size:2492K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R1K4CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R1K4CE, IPU50R1K4CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.6. ipd50r950ce.pdf Size:2499K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R950CE, IPU50R950CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.7. ipd50r3k0ce.pdf Size:2513K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R3K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R3K0CE, IPU50R3K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.8. ipd50r520cp rev21.pdf Size:702K _infineon

IPD50R2K0CE
IPD50R2K0CE

Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Product Summary Package V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI 7G=; Qg typ 1 nC Qg typ 1 nC V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8 4.9. ipd50r380ce.pdf Size:1840K _infineon

IPD50R2K0CE
IPD50R2K0CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R380CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R380CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

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