IPD13N03LAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD13N03LA G IPF13N03LA GIPS13N03LA G IPU13N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR 12.8mDS(on),max Qualified according to JEDEC1) for target applicationsI 30 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C opera

IPD135N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switchingRDS(on),max 13.5 mW Optimized technology for DC/DC convertersID 45 A Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target

Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very

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isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03LFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV

isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3FEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8