IPD13N03LAG - описание и поиск аналогов

 ..1. Size:545K  infineon
 ipd13n03lag ipf13n03lag ipu13n03lag.pdf 

IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R 12.8 m DS(on),max Qualified according to JEDEC1) for target applications I 30 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C opera

 9.1. Size:354K  infineon
 ipd135n08n3g.pdf 

IPD135N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching RDS(on),max 13.5 mW Optimized technology for DC/DC converters ID 45 A Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target

 9.2. Size:537K  infineon
 ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf 

Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 13.5 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very

 9.3. Size:1393K  infineon
 ipd135n03l.pdf 

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 9.4. Size:1378K  infineon
 ipd135n03lg.pdf 

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 ipd135n08n3.pdf 

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 ipd135n03lg ipf135n03lg ips135n03lg ipu135n03lg.pdf 

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 9.7. Size:241K  inchange semiconductor
 ipd135n03l.pdf 

isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03L FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V

 9.8. Size:243K  inchange semiconductor
 ipd135n08n3.pdf 

isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8