IPD060N03L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD060N03L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO-252

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IPD060N03L datasheet

 ..1. Size:634K  infineon
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf pdf_icon

IPD060N03L

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 ..2. Size:521K  infineon
ipd060n03l.pdf pdf_icon

IPD060N03L

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

 ..3. Size:241K  inchange semiconductor
ipd060n03l.pdf pdf_icon

IPD060N03L

isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga

 0.1. Size:523K  infineon
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf pdf_icon

IPD060N03L

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

Otros transistores... IPD50R2K0CE, IPD50R280CE, IPD50R1K4CE, IPD13N03LAG, IPD135N03L, IPD090N03L, IPD075N03L, IPD06N03LBG, IRLB4132, IPD053N06N, IPD050N03L, IPD04N03LBG, IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, IPD024N06N