IPD060N03L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD060N03L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO-252
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IPD060N03L datasheet
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf
Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low
ipd060n03l.pdf
Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo
ipd060n03l.pdf
isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf
Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo
Otros transistores... IPD50R2K0CE, IPD50R280CE, IPD50R1K4CE, IPD13N03LAG, IPD135N03L, IPD090N03L, IPD075N03L, IPD06N03LBG, IRLB4132, IPD053N06N, IPD050N03L, IPD04N03LBG, IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, IPD024N06N
History: IPB05N03LBG | IPU135N03L
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