IPD060N03L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPD060N03L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 720 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO-252
Аналог (замена) для IPD060N03L
IPD060N03L Datasheet (PDF)
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ipd060n03l.pdf

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo
ipd060n03l.pdf

isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03LFEATURESStatic drain-source on-resistance:RDS(on)6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo
Другие MOSFET... IPD50R2K0CE , IPD50R280CE , IPD50R1K4CE , IPD13N03LAG , IPD135N03L , IPD090N03L , IPD075N03L , IPD06N03LBG , 5N60 , IPD053N06N , IPD050N03L , IPD04N03LBG , IPD040N03L , IPD03N03LAG , IPD031N03L , IPD025N06N , IPD024N06N .



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