IPD050N03L Todos los transistores

 ..1. Size:1000K  infineon
 ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf

Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on

 ..2. Size:630K  infineon
 ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf

Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 ..3. Size:241K  inchange semiconductor
 ipd050n03l.pdf

isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L FEATURES Static drain-source on-resistance RDS(on) 5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga

 0.1. Size:1220K  infineon
 ipd050n03lg.pdf

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 0.2. Size:1221K  infineon
 ipd050n03lg2.pdf

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@ %>E Features D R 3DE DH;E5 ;@9 ') - . 8AC -'*- m D n) m x R ) BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD D 1) R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ( 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ) ' D n) R 07CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 C3E76 R *4 8C77 B>3E;@9 , A"- 5A?B>;3@E Type

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 ipd050n10n5.pdf

IPD050N10N5 MOSFET D-PAK OptiMOSTM5 Power-Transistor, 100 V Features N-channel, normal level tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 C operating temperature 1 2 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 3 Ideal for high-frequency switching and synchronous

 7.2. Size:242K  inchange semiconductor
 ipd050n10n5.pdf

isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5 FEATURES Static drain-source on-resistance RDS(on) 5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100