IPB65R420CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB65R420CFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de IPB65R420CFD MOSFET
- Selecciónⓘ de transistores por parámetros
IPB65R420CFD datasheet
ipa65r420cfd ipb65r420cfd ipi65r420cfd ipp65r420cfd ipw65r420cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R420CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R420CFD , IPB65R420CFD , IPP65R420CFD IPA65R420CFD , IPD65R420CFD , IPI65R420CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology f
ipw65r420cfd ipb65r420cfd ipp65r420cfd ipa65r420cfd ipd65r420cfd ipi65r420cfd.pdf
MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i
ipb65r420cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R420CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
ipw65r150cfda ipb65r150cfda ipp65r150cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf
MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/
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MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
ipb65r125c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R125C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R125C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
ipb65r380c6.pdf
MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
ipa65r150cfd ipb65r150cfd ipi65r150cfd ipp65r150cfd ipw65r150cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
ipb65r190cfda ipp65r190cfda ipw65r190cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
ipw65r150cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
ipb65r115cfd7a.pdf
IPB65R115CFD7A MOSFET D PAK 650V CoolMOS CFD7A SJ Power Device 650V CoolMOS CFD7A is Infineon's latest generation of market leading tab automotive qualified high voltage CoolMOS MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS C6 CFD Power Transistor TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology fo
ipw65r190cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R190CFD Data Sheet Rev. 2.7 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R110CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R110CFDA, IPB65R110CFDA IPP65R110CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
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MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R110CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R110CFDA, IPB65R110CFDA IPP65R110CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs
ipb65r190c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R190C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipa65r310cfd ipb65r310cfd ipi65r310cfd ipp65r310cfd ipw65r310cfd ipw65r310cfd ipb65r310cfd ipp65r310cfd ipa65r310cfd ipi65r310cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R310CFD Data Sheet Rev. 2.3 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R310CFD , IPB65R310CFD , IPP65R310CFD IPA65R310CFD , IPI65R310CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi
ipb65r045c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R045C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs
ipb65r065c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R065C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R065C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipb65r660cfda ipp65r660cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R660CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPB65R660CFDA, IPP65R660CFDA D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (
ipb65r095c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R095C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipb65r280e6 ipi65r280e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
ipb65r225c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R225C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipb65r310cfda ipp65r310cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R310CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) princi
ipb65r125c7.pdf
Isc N-Channel MOSFET Transistor IPB65R125C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r380c6.pdf
Isc N-Channel MOSFET Transistor IPB65R380C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r190cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R190CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
ipb65r150cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB65R150CFD FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
ipb65r310cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R310CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
ipb65r190c7.pdf
isc N-Channel MOSFET Transistor IPB65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATING
ipb65r110cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB65R110CFD FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
ipb65r045c7.pdf
Isc N-Channel MOSFET Transistor IPB65R045C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r065c7.pdf
Isc N-Channel MOSFET Transistor IPB65R065C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r280e6.pdf
Isc N-Channel MOSFET Transistor IPB65R280E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r095c7.pdf
Isc N-Channel MOSFET Transistor IPB65R095C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r099c6.pdf
Isc N-Channel MOSFET Transistor IPB65R099C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r190e6.pdf
Isc N-Channel MOSFET Transistor IPB65R190E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r280c6.pdf
Isc N-Channel MOSFET Transistor IPB65R280C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r660cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R660CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
ipb65r190c6.pdf
Isc N-Channel MOSFET Transistor IPB65R190C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb65r225c7.pdf
isc N-Channel MOSFET Transistor IPB65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate char
ipb65r600c6.pdf
Isc N-Channel MOSFET Transistor IPB65R600C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
Otros transistores... IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, IPD024N06N, IPB90R340C3, IPB80N06S3L-05, IPB65R660CFDA, IRF1010E, IPB65R310CFDA, IPB65R310CFD, IPB65R225C7, IPB65R190E6, IPB65R190CFDA, IPB65R190CFD, IPB65R190C7, IPB65R190C6
History: IPB12CN10NG | IPB65R150CFD
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