IPB65R420CFD Specs and Replacement
Type Designator: IPB65R420CFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO-263
IPB65R420CFD substitution
- MOSFET ⓘ Cross-Reference Search
IPB65R420CFD datasheet
ipa65r420cfd ipb65r420cfd ipi65r420cfd ipp65r420cfd ipw65r420cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R420CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R420CFD , IPB65R420CFD , IPP65R420CFD IPA65R420CFD , IPD65R420CFD , IPI65R420CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology f... See More ⇒
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ipb65r420cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R420CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
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ipb65r190c7.pdf
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ipb65r045c7.pdf
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ipb65r065c7.pdf
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ipb65r095c7.pdf
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
ipb65r225c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R225C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab ... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R310CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) princi... See More ⇒
ipb65r125c7.pdf
Isc N-Channel MOSFET Transistor IPB65R125C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r380c6.pdf
Isc N-Channel MOSFET Transistor IPB65R380C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r190cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R190CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb65r150cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB65R150CFD FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
ipb65r310cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R310CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb65r190c7.pdf
isc N-Channel MOSFET Transistor IPB65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATING... See More ⇒
ipb65r110cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB65R110CFD FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
ipb65r045c7.pdf
Isc N-Channel MOSFET Transistor IPB65R045C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r065c7.pdf
Isc N-Channel MOSFET Transistor IPB65R065C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r280e6.pdf
Isc N-Channel MOSFET Transistor IPB65R280E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r095c7.pdf
Isc N-Channel MOSFET Transistor IPB65R095C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r099c6.pdf
Isc N-Channel MOSFET Transistor IPB65R099C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r190e6.pdf
Isc N-Channel MOSFET Transistor IPB65R190E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r280c6.pdf
Isc N-Channel MOSFET Transistor IPB65R280C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r660cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R660CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb65r190c6.pdf
Isc N-Channel MOSFET Transistor IPB65R190C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r225c7.pdf
isc N-Channel MOSFET Transistor IPB65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate char... See More ⇒
ipb65r600c6.pdf
Isc N-Channel MOSFET Transistor IPB65R600C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
Detailed specifications: IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, IPD024N06N, IPB90R340C3, IPB80N06S3L-05, IPB65R660CFDA, IRF1010E, IPB65R310CFDA, IPB65R310CFD, IPB65R225C7, IPB65R190E6, IPB65R190CFDA, IPB65R190CFD, IPB65R190C7, IPB65R190C6
Keywords - IPB65R420CFD MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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