IPB65R420CFD Specs and Replacement
Type Designator: IPB65R420CFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO-263
IPB65R420CFD substitution
- MOSFET ⓘ Cross-Reference Search
IPB65R420CFD datasheet
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R420CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R420CFD , IPB65R420CFD , IPP65R420CFD IPA65R420CFD , IPD65R420CFD , IPI65R420CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology f... See More ⇒
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ipb65r420cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R420CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
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ipb65r125c7.pdf
Isc N-Channel MOSFET Transistor IPB65R125C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r380c6.pdf
Isc N-Channel MOSFET Transistor IPB65R380C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r190cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R190CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb65r150cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB65R150CFD FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
ipb65r310cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R310CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb65r190c7.pdf
isc N-Channel MOSFET Transistor IPB65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATING... See More ⇒
ipb65r110cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB65R110CFD FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
ipb65r045c7.pdf
Isc N-Channel MOSFET Transistor IPB65R045C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r065c7.pdf
Isc N-Channel MOSFET Transistor IPB65R065C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r280e6.pdf
Isc N-Channel MOSFET Transistor IPB65R280E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r095c7.pdf
Isc N-Channel MOSFET Transistor IPB65R095C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r099c6.pdf
Isc N-Channel MOSFET Transistor IPB65R099C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r190e6.pdf
Isc N-Channel MOSFET Transistor IPB65R190E6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r280c6.pdf
Isc N-Channel MOSFET Transistor IPB65R280C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r660cfd.pdf
Isc N-Channel MOSFET Transistor IPB65R660CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
ipb65r190c6.pdf
Isc N-Channel MOSFET Transistor IPB65R190C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb65r225c7.pdf
isc N-Channel MOSFET Transistor IPB65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate char... See More ⇒
ipb65r600c6.pdf
Isc N-Channel MOSFET Transistor IPB65R600C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
Detailed specifications: IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, IPD024N06N, IPB90R340C3, IPB80N06S3L-05, IPB65R660CFDA, IRF1010E, IPB65R310CFDA, IPB65R310CFD, IPB65R225C7, IPB65R190E6, IPB65R190CFDA, IPB65R190CFD, IPB65R190C7, IPB65R190C6
Keywords - IPB65R420CFD MOSFET specs
IPB65R420CFD cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPC100N04S5-2R8 | IPB80N08S4-06 | IPB039N10N3G
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