IPB65R190CFDA Todos los transistores

 

IPB65R190CFDA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB65R190CFDA

Código: 65F6190A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 151 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 17.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Tiempo de elevación (tr): 8.4 nS

Conductancia de drenaje-sustrato (Cd): 86 pF

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO-263

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IPB65R190CFDA Datasheet (PDF)

1.1. ipb65r190cfda.pdf Size:2175K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS™ CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

1.2. ipb65r190c7.pdf Size:1734K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS™ C7 Power Transistor IPB65R190C7 D²PAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab

 1.3. ipa65r190e6 ipb65r190e6 ipi65r190e6.pdf Size:2211K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.4. ipa65r190cfd ipb65r190cfd ipi65r190cfd.pdf Size:6482K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS™ C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS™ C6 CFD Power Transistor TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology fo

 1.5. ipa65r190c6 ipb65r190c6 ipi65r190c6.pdf Size:2212K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.6. ipb65r190c6.pdf Size:258K _inchange_semiconductor

IPB65R190CFDA
IPB65R190CFDA

Isc N-Channel MOSFET Transistor IPB65R190C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

1.7. ipb65r190cfd.pdf Size:258K _inchange_semiconductor

IPB65R190CFDA
IPB65R190CFDA

Isc N-Channel MOSFET Transistor IPB65R190CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.8. ipb65r190e6.pdf Size:258K _inchange_semiconductor

IPB65R190CFDA
IPB65R190CFDA

Isc N-Channel MOSFET Transistor IPB65R190E6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

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