Справочник MOSFET. IPB65R190CFDA

 

IPB65R190CFDA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPB65R190CFDA

Маркировка: 65F6190A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 151 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4.5 V

Максимально допустимый постоянный ток стока (Id): 17.5 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 8.4 ns

Выходная емкость (Cd): 86 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm

Тип корпуса: TO-263

Аналог (замена) для IPB65R190CFDA

 

 

IPB65R190CFDA Datasheet (PDF)

1.1. ipb65r190cfda.pdf Size:2175K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS™ CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

1.2. ipb65r190c7.pdf Size:1734K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS™ C7 Power Transistor IPB65R190C7 D²PAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab

 1.3. ipa65r190e6 ipb65r190e6 ipi65r190e6.pdf Size:2211K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.4. ipa65r190cfd ipb65r190cfd ipi65r190cfd.pdf Size:6482K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS™ C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS™ C6 CFD Power Transistor TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology fo

 1.5. ipa65r190c6 ipb65r190c6 ipi65r190c6.pdf Size:2212K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.6. ipb65r190c6.pdf Size:258K _inchange_semiconductor

IPB65R190CFDA
IPB65R190CFDA

Isc N-Channel MOSFET Transistor IPB65R190C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

1.7. ipb65r190cfd.pdf Size:258K _inchange_semiconductor

IPB65R190CFDA
IPB65R190CFDA

Isc N-Channel MOSFET Transistor IPB65R190CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.8. ipb65r190e6.pdf Size:258K _inchange_semiconductor

IPB65R190CFDA
IPB65R190CFDA

Isc N-Channel MOSFET Transistor IPB65R190E6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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