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IPB65R190CFDA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPB65R190CFDA

Маркировка: 65F6190A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 151 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4.5 V

Максимально допустимый постоянный ток стока (Id): 17.5 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 8.4 ns

Выходная емкость (Cd): 86 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm

Тип корпуса: TO-263

Аналог (замена) для IPB65R190CFDA

 

 

IPB65R190CFDA Datasheet (PDF)

1.1. ipa65r190cfd ipb65r190cfd ipi65r190cfd.pdf Size:6482K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS™ C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS™ C6 CFD Power Transistor TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology fo

1.2. ipa65r190e6 ipb65r190e6 ipi65r190e6.pdf Size:2211K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

 1.3. ipb65r190c7.pdf Size:1734K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS™ C7 Power Transistor IPB65R190C7 D²PAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab

1.4. ipa65r190c6 ipb65r190c6 ipi65r190c6.pdf Size:2212K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

 1.5. ipb65r190cfda.pdf Size:2175K _infineon

IPB65R190CFDA
IPB65R190CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS™ CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |
 

 

 

 

 

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