IPB65R125C7 Todos los transistores

 

IPB65R125C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB65R125C7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 101 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO-263
 

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IPB65R125C7 Datasheet (PDF)

 ..1. Size:1748K  infineon
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IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R125C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

 ..2. Size:258K  inchange semiconductor
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IPB65R125C7

Isc N-Channel MOSFET Transistor IPB65R125C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.1. Size:2212K  infineon
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf pdf_icon

IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.2. Size:2173K  infineon
ipb65r150cfda ipp65r150cfda ipw65r150cfda.pdf pdf_icon

IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

Otros transistores... IPB65R225C7 , IPB65R190E6 , IPB65R190CFDA , IPB65R190CFD , IPB65R190C7 , IPB65R190C6 , IPB65R150CFDA , IPB65R150CFD , 18N50 , IPB65R110CFDA , IPB65R110CFD , IPB65R099C6 , IPB65R095C7 , IPB65R065C7 , IPB65R045C7 , IPB45N06S3-16 , IPB407N30N .

History: NVMFS4C01N | AP6679GP-HF | VN10K-TO18 | NCE65N260 | JCS16N25VC

 

 
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