All MOSFET. IPB65R125C7 Datasheet

 

IPB65R125C7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB65R125C7
   Marking Code: 65C7125
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 26 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
   Package: TO-263

 IPB65R125C7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB65R125C7 Datasheet (PDF)

 ..1. Size:1748K  infineon
ipb65r125c7.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R125C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

 ..2. Size:258K  inchange semiconductor
ipb65r125c7.pdf

IPB65R125C7 IPB65R125C7

Isc N-Channel MOSFET Transistor IPB65R125C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.1. Size:2212K  infineon
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.2. Size:2173K  infineon
ipb65r150cfda ipp65r150cfda ipw65r150cfda.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.3. Size:2189K  infineon
ipw65r150cfda ipb65r150cfda ipp65r150cfda.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.4. Size:2192K  infineon
ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.5. Size:3853K  infineon
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 7.6. Size:3773K  infineon
ipa65r150cfd ipb65r150cfd ipi65r150cfd ipp65r150cfd ipw65r150cfd.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 7.7. Size:2175K  infineon
ipb65r190cfda ipp65r190cfda ipw65r190cfda.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.8. Size:3818K  infineon
ipw65r150cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 7.9. Size:1411K  infineon
ipb65r115cfd7a.pdf

IPB65R125C7 IPB65R125C7

IPB65R115CFD7AMOSFETDPAK650V CoolMOS CFD7A SJ Power Device650V CoolMOS CFD7A is Infineon's latest generation of market leadingtabautomotive qualified high voltage CoolMOS MOSFETs. In addition to thewell-known attributes of high quality and reliability required by theautomotive industry, the new CoolMOS CFD7A series provides for anintegrated fast body diode and can

 7.10. Size:3828K  infineon
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 7.11. Size:6482K  infineon
ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo

 7.12. Size:3820K  infineon
ipw65r190cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R190CFD Data SheetRev. 2.7FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 7.13. Size:2288K  infineon
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 7.14. Size:2324K  infineon
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 7.15. Size:1734K  infineon
ipb65r190c7.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R190C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

 7.16. Size:2211K  infineon
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf

IPB65R125C7 IPB65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R190E6 Data SheetRev. 2.0, 2011-05-13Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6IPI65R190E6, IPP65R190E6IPW65R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.17. Size:258K  inchange semiconductor
ipb65r190cfd.pdf

IPB65R125C7 IPB65R125C7

Isc N-Channel MOSFET Transistor IPB65R190CFDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 7.18. Size:204K  inchange semiconductor
ipb65r150cfd.pdf

IPB65R125C7 IPB65R125C7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB65R150CFDFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 7.19. Size:255K  inchange semiconductor
ipb65r190c7.pdf

IPB65R125C7 IPB65R125C7

isc N-Channel MOSFET Transistor IPB65R190C7FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATING

 7.20. Size:205K  inchange semiconductor
ipb65r110cfd.pdf

IPB65R125C7 IPB65R125C7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB65R110CFDFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 7.21. Size:258K  inchange semiconductor
ipb65r190e6.pdf

IPB65R125C7 IPB65R125C7

Isc N-Channel MOSFET Transistor IPB65R190E6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.22. Size:258K  inchange semiconductor
ipb65r190c6.pdf

IPB65R125C7 IPB65R125C7

Isc N-Channel MOSFET Transistor IPB65R190C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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