IPB65R125C7 Specs and Replacement

Type Designator: IPB65R125C7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 101 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-263

IPB65R125C7 substitution

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IPB65R125C7 datasheet

 ..1. Size:1748K  infineon
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IPB65R125C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R125C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R125C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab ... See More ⇒

 ..2. Size:258K  inchange semiconductor
ipb65r125c7.pdf pdf_icon

IPB65R125C7

Isc N-Channel MOSFET Transistor IPB65R125C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 7.1. Size:2212K  infineon
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf pdf_icon

IPB65R125C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 7.2. Size:2173K  infineon
ipb65r150cfda ipp65r150cfda ipw65r150cfda.pdf pdf_icon

IPB65R125C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup... See More ⇒

Detailed specifications: IPB65R225C7, IPB65R190E6, IPB65R190CFDA, IPB65R190CFD, IPB65R190C7, IPB65R190C6, IPB65R150CFDA, IPB65R150CFD, BS170, IPB65R110CFDA, IPB65R110CFD, IPB65R099C6, IPB65R095C7, IPB65R065C7, IPB65R045C7, IPB45N06S3-16, IPB407N30N

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