IPB65R095C7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB65R095C7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 128 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 33 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de IPB65R095C7 MOSFET
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IPB65R095C7 datasheet
ipb65r095c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPB65R095C7 D PAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab
ipb65r095c7.pdf
Isc N-Channel MOSFET Transistor IPB65R095C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs
ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs
Otros transistores... IPB65R190C7, IPB65R190C6, IPB65R150CFDA, IPB65R150CFD, IPB65R125C7, IPB65R110CFDA, IPB65R110CFD, IPB65R099C6, 2SK3568, IPB65R065C7, IPB65R045C7, IPB45N06S3-16, IPB407N30N, IPB14N03LA, IPB12CN10NG, IPB117N20NFD, IPB110N06LG
History: IPB65R150CFD | IPB12CN10NG
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