IPB117N20NFD Todos los transistores

 ..1. Size:1099K  infineon
 ipb117n20nfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTMFD Power-Transistor, 200 V IPB117N20NFD Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTMFD Power-Transistor, 200 V IPB117N20NFD D PAK 1 Description Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Very low o

 ..2. Size:257K  inchange semiconductor
 ipb117n20nfd.pdf

Isc N-Channel MOSFET Transistor IPB117N20NFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.1. Size:300K  infineon
 ipb114n03l-g ipp114n03l-g.pdf

Type IPP114N03L G IPB114N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 11.4 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 9.2. Size:933K  infineon
 ipb110p06lm.pdf

IPB110P06LM MOSFET D PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant 1 Halogen-free according to IEC61249-2-21 3 Product validation Fully qualified according to JEDEC for Industrial Applications Drain t

 9.3. Size:991K  infineon
 ipb110n20n3lf.pdf

IPB110N20N3LF MOSFET D PAK OptiMOSTM 3 Linear FET, 200 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain

 9.4. Size:334K  infineon
 ipb110n06lg.pdf

IPB110N06L G IPP110N06L G OptiMOS Power-Transistor Product Summary Features V 60 V DS For fast switching converters and sync. rectification R 11 m DS(on),max SMD version N-channel enhancement - logic level I 78 A D 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Type IPB110N06L G IPP110N06L G Type Package Marking IPB1

 9.5. Size:740K  infineon
 ipb110n06lg ipp110n06lg.pdf

 9.6. Size:258K  inchange semiconductor
 ipb110n20n3lf.pdf

Isc N-Channel MOSFET Transistor IPB110N20N3LF FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source