MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTMFD Power-Transistor, 200 VIPB117N20NFDData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTMFD Power-Transistor, 200 VIPB117N20NFDDPAK1 DescriptionFeatures N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness Very low o

Isc N-Channel MOSFET Transistor IPB117N20NFDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

IPB110P06LMMOSFETDPAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant1 Halogen-free according to IEC61249-2-213Product validationFully qualified according to JEDEC for Industrial ApplicationsDraint

IPB110N20N3LFMOSFETDPAKOptiMOSTM 3 Linear FET, 200 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

IPB110N06L G IPP110N06L GOptiMOS Power-TransistorProduct SummaryFeaturesV 60 VDS For fast switching converters and sync. rectificationR 11mDS(on),max SMD version N-channel enhancement - logic levelI 78 AD 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliantType IPB110N06L G IPP110N06L GType Package MarkingIPB1

IPB110N06L G IPP110N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 11 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

Isc N-Channel MOSFET Transistor IPB110N20N3LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source