IPB020N10N5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB020N10N5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 1810 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO-263

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IPB020N10N5 datasheet

 ..1. Size:1169K  infineon
 ipb020n10n5.pdf pdf_icon

IPB020N10N5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB020N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB020N10N5 D PAK 1 Description Features N-channel, normal level Optimized for FOM OSS Very low on-resistance R DS(on) 175 C operating temperature

 ..2. Size:204K  inchange semiconductor
 ipb020n10n5.pdf pdf_icon

IPB020N10N5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB020N10N5 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very low on-resistence Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.1. Size:1011K  infineon
 ipb020n10n5lf.pdf pdf_icon

IPB020N10N5

IPB020N10N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain

 0.2. Size:258K  inchange semiconductor
 ipb020n10n5lf.pdf pdf_icon

IPB020N10N5

Isc N-Channel MOSFET Transistor IPB020N10N5LF FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

MOSTRAR MÁS

Otros transistores... IPB03N03LBG, IPB039N10N3GE8187, IPB034N03L, IPB031N08N5, IPB029N06N3GE8187, IPB027N10N5, IPB026N06N, IPB024N08N5, AO4468, IPB020N08N5, IPB017N10N5, IPB017N08N5, IPB015N08N5, IPB015N04L, IPB014N06N, IPB011N04L, IPB010N06N