IRFP460LC Datasheet. Equivalente

 ..1. Size:205K  international rectifier
 irfp460lcpbf.pdf

PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number 91235 www.vishay.com 1 IRFP460LCPbF Document Number 91235 www.vishay.com 2 IRFP460LCPbF Document Number 91235 www.vishay.com 3 IRFP460LCPbF Document Number 91235 www.vishay.com 4 IRFP460LCPbF Document Number 91235 www.vishay.com 5 IRFP460LCPbF Document Number 91235 www.vishay.com 6 IRFP460LCPbF Docu

 ..2. Size:154K  international rectifier
 irfp460lc.pdf

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 ..3. Size:1124K  vishay
 irfp460lc sihfp460lc.pdf

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

 ..4. Size:1133K  infineon
 irfp460lc sihfp460lc.pdf

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

 7.1. Size:873K  international rectifier
 irfp460.pdf

PD - 94901 IRFP460PbF Lead-Free 12/19/03 Document Number 91237 www.vishay.com 1 IRFP460PbF Document Number 91237 www.vishay.com 2 IRFP460PbF Document Number 91237 www.vishay.com 3 IRFP460PbF Document Number 91237 www.vishay.com 4 IRFP460PbF Document Number 91237 www.vishay.com 5 IRFP460PbF Document Number 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package O

 7.2. Size:206K  international rectifier
 irfp460apbf.pdf

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc

 7.3. Size:115K  international rectifier
 irfp460as.pdf

PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third

 7.4. Size:94K  international rectifier
 irfp460n.pdf

PD-94098 SMPS MOSFET IRFP460N HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 7.5. Size:161K  international rectifier
 irfp460npbf.pdf

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Character

 7.6. Size:172K  international rectifier
 irfp460p.pdf

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27 G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET s from International Rectifier provide the designer with the best combination of f

 7.7. Size:95K  international rectifier
 irfp460a.pdf

PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 7.8. Size:91K  st
 irfp460.pdf

IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V

 7.9. Size:770K  fairchild semi
 irfp460c.pdf

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 130nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to

 7.10. Size:159K  vishay
 irfp460 sihfp460.pdf

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le

 7.11. Size:158K  vishay
 irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura

 7.12. Size:183K  vishay
 irfp460b sihg460b.pdf

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate

 7.13. Size:180K  vishay
 irfp460a sihfp460a.pdf

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configurat

 7.14. Size:156K  vishay
 irfp460pbf irfp460 sihfp460.pdf

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le

 7.15. Size:77K  ixys
 irfp460.pdf

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A RDS(on) = 0.27 N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C20 A G = Gate, D = Drain, IDM TC = 25 C, pulse wi

 7.16. Size:1838K  cn vbsemi
 irfp460pbf.pdf

IRFP460PBF www.VBsemi.tw N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 350 Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

 7.17. Size:794K  cn minos
 irfp460.pdf

Silicon N-Channel Power MOSFET Description IRFP460 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R

 7.18. Size:375K  inchange semiconductor
 irfp460b.pdf

isc N-Channel MOSFET Transistor IRFP460B FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 7.19. Size:234K  inchange semiconductor
 irfp460.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 7.20. Size:212K  inchange semiconductor
 irfp460apbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So