IRFP460LC MOSFET. Datasheet pdf. Equivalent

IRFP460LC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP460LC Datasheet (PDF)

..1. irfp460lc.pdf Size:154K _international_rectifier

PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

..2. irfp460lcpbf.pdf Size:205K _international_rectifier

PD - 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu

..3. irfp460lc sihfp460lc.pdf Size:1124K _vishay

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

..4. irfp460lc sihfp460lc.pdf Size:1133K _infineon

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

7.1. irfp460n.pdf Size:94K _international_rectifier

PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

7.2. irfp460.pdf Size:873K _international_rectifier

PD - 94901IRFP460PbF Lead-Free12/19/03Document Number: 91237 www.vishay.com1IRFP460PbFDocument Number: 91237 www.vishay.com2IRFP460PbFDocument Number: 91237 www.vishay.com3IRFP460PbFDocument Number: 91237 www.vishay.com4IRFP460PbFDocument Number: 91237 www.vishay.com5IRFP460PbFDocument Number: 91237 www.vishay.com6IRFP460PbFTO-247AC Package O

 7.3. irfp460p.pdf Size:154K _international_rectifier

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

7.4. irfp460as.pdf Size:115K _international_rectifier

PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird

 7.5. irfp460apbf.pdf Size:206K _international_rectifier

PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc

7.6. irfp460a.pdf Size:95K _international_rectifier

PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

7.7. irfp460npbf.pdf Size:161K _international_rectifier

PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character

7.8. irfp460.pdf Size:91K _st

IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFP460 500 V

7.9. irfp460c.pdf Size:770K _fairchild_semi

February 2002IRFP460C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

7.10. irfp460b sihg460b.pdf Size:183K _vishay

IRFP460B, SiHG460Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.25- Low Input Capacitance (Ciss)Qg max. (nC) 170- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 28- Avalanche Energy Rate

7.11. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat

7.12. irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf Size:158K _vishay

IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura

7.13. irfp460pbf irfp460 sihfp460.pdf Size:156K _vishay

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

7.14. irfp460 sihfp460.pdf Size:159K _vishay

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

7.15. irfp460p.pdf Size:172K _infineon

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

7.16. irfp460.pdf Size:77K _ixys

MegaMOSTM IRFP 460 VDSS = 500 VPower MOSFET ID(cont) = 20 ARDS(on) = 0.27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi

7.17. irfp460pbf.pdf Size:1838K _cn_vbsemi

IRFP460PBFwww.VBsemi.twN-Channel 500V(D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 350RuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

7.18. irfp460.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

7.19. irfp460apbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

7.20. irfp460b.pdf Size:375K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFP460BFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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