IRFP460LC Datasheet and Replacement

PD - 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu

PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

PD - 94901IRFP460PbF Lead-Free12/19/03Document Number: 91237 www.vishay.com1IRFP460PbFDocument Number: 91237 www.vishay.com2IRFP460PbFDocument Number: 91237 www.vishay.com3IRFP460PbFDocument Number: 91237 www.vishay.com4IRFP460PbFDocument Number: 91237 www.vishay.com5IRFP460PbFDocument Number: 91237 www.vishay.com6IRFP460PbFTO-247AC Package O

PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc

PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird

PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFP460 500 V

February 2002IRFP460C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura

IRFP460B, SiHG460Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.25- Low Input Capacitance (Ciss)Qg max. (nC) 170- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 28- Avalanche Energy Rate

IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

MegaMOSTM IRFP 460 VDSS = 500 VPower MOSFET ID(cont) = 20 ARDS(on) = 0.27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi

IRFP460PBFwww.VBsemi.twN-Channel 500V(D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 350RuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

Silicon N-Channel Power MOSFETDescriptionIRFP460 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General Features V =500V, R

isc N-Channel MOSFET Transistor IRFP460BFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So