IPB014N06N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB014N06N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 214 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 18 nS
Cossⓘ - Capacitancia de salida: 1800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Encapsulados: TO-263-7
Búsqueda de reemplazo de IPB014N06N MOSFET
- Selecciónⓘ de transistores por parámetros
IPB014N06N datasheet
..1. Size:605K infineon
ipb014n06n.pdf 
Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for synchronous rectification VDS 60 V 100% avalanche tested RDS(on),max 1.4 mW Superior thermal resistance ID 180 A N-channel, normal level QOSS nC 119 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant
9.1. Size:611K infineon
ipb010n06n.pdf
IPB010N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.0 mW 100% avalanche tested ID 180 A Superior thermal resistance Qoss 228 nC N-channel, normal level QG(0V..10V) 208 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-f
9.2. Size:1149K infineon
ipb017n08n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R
9.3. Size:670K infineon
ipp015n04n ipb015n04n.pdf
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9.4. Size:440K infineon
ipb015n04l.pdf
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9.5. Size:2346K infineon
ipb017n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB017N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB017N10N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Excellent gate charge x R product (FOM) DS(on) Very low
9.6. Size:670K infineon
ipp015n04n6 ipb015n04n6.pdf
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9.7. Size:2348K infineon
ipb015n08n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate ch
9.8. Size:673K infineon
ipp015n04ng ipb015n04ng.pdf
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9.9. Size:1072K infineon
ipb019n08n5.pdf
IPB019N08N5 MOSFET D -PAK 7pin OptiMOS 5 Power-Transistor, 80 V Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 100% avalanche tested 7 Pb-free plating; RoHS compliant Industrial qual
9.11. Size:499K infineon
ipb011n04l.pdf
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9.12. Size:660K infineon
ipb016n06l3 ipb016n06l3g.pdf
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9.13. Size:541K infineon
ipb019n06l3 ipb019n06l3g.pdf
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9.14. Size:1097K infineon
ipb017n10n5lf.pdf
IPB017N10N5LF MOSFET D -PAK 7pin OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications tab Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 1 100% avalanche tested Pb-free plating; RoHS compliant 7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61
9.15. Size:501K infineon
ipb011n04lg ipb011n04l .pdf
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9.16. Size:689K infineon
ipb019n08n3 ipb019n08n3g.pdf
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9.19. Size:252K inchange semiconductor
ipb015n04l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM
9.20. Size:252K inchange semiconductor
ipb019n06l3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB019N06L3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXI
9.21. Size:257K inchange semiconductor
ipb015n04n.pdf
Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
Otros transistores... IPB026N06N, IPB024N08N5, IPB020N10N5, IPB020N08N5, IPB017N10N5, IPB017N08N5, IPB015N08N5, IPB015N04L, 20N60, IPB011N04L, IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE, IPA80R1K0CE
