IPB014N06N Specs and Replacement
Type Designator: IPB014N06N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ -
Output Capacitance: 1800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: TO-263-7
- MOSFET ⓘ Cross-Reference Search
IPB014N06N datasheet
..1. Size:605K infineon
ipb014n06n.pdf 
Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for synchronous rectification VDS 60 V 100% avalanche tested RDS(on),max 1.4 mW Superior thermal resistance ID 180 A N-channel, normal level QOSS nC 119 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant ... See More ⇒
9.1. Size:611K infineon
ipb010n06n.pdf
IPB010N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.0 mW 100% avalanche tested ID 180 A Superior thermal resistance Qoss 228 nC N-channel, normal level QG(0V..10V) 208 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-f... See More ⇒
9.2. Size:1149K infineon
ipb017n08n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R... See More ⇒
9.3. Size:670K infineon
ipp015n04n ipb015n04n.pdf
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9.5. Size:2346K infineon
ipb017n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB017N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB017N10N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒
9.6. Size:670K infineon
ipp015n04n6 ipb015n04n6.pdf
pe ## ! ! # ! ! D # A0;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E R "... See More ⇒
9.7. Size:2348K infineon
ipb015n08n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate ch... See More ⇒
9.8. Size:673K infineon
ipp015n04ng ipb015n04ng.pdf
pe ## ! ! # ! ! D # A0;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E R "... See More ⇒
9.9. Size:1072K infineon
ipb019n08n5.pdf
IPB019N08N5 MOSFET D -PAK 7pin OptiMOS 5 Power-Transistor, 80 V Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 100% avalanche tested 7 Pb-free plating; RoHS compliant Industrial qual... See More ⇒
9.11. Size:499K infineon
ipb011n04l.pdf
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9.12. Size:660K infineon
ipb016n06l3 ipb016n06l3g.pdf
pe % # ! F % (>.;?6?@ %>E Features D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 1 m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD 1 D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D DE2?46 , D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D... See More ⇒
9.13. Size:541K infineon
ipb019n06l3 ipb019n06l3g.pdf
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9.14. Size:1097K infineon
ipb017n10n5lf.pdf
IPB017N10N5LF MOSFET D -PAK 7pin OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications tab Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 1 100% avalanche tested Pb-free plating; RoHS compliant 7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61... See More ⇒
9.15. Size:501K infineon
ipb011n04lg ipb011n04l .pdf
pe $ " E $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 4 D R ') - . 8AC ) , ;@9 3@6 / @;@E7CCFBE;4>7 *AH7C -FBB>J 1 1 mW - A@ ?3I 1) R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D 1 D R ( 5 3@@7> R &A9;5 >7G7> R / >EC3 >AH A@ C7D;DE3@57 D n) G O 7 R G3>3@5 7 E7DE76 R *4 8C77 B>3E;@9 , A"- 5A?B>;3@E R "3>A97@ 8C77 355AC6;@9 EA # Type Package Marking ... See More ⇒
9.16. Size:689K infineon
ipb019n08n3 ipb019n08n3g.pdf
# ! ! D # A03 B53 1 m D n) m x Q ( @D9=9J54 D538>?C 1 D Q H3579>55B9>7 Q .5BI B5C9CD1>35 + D n) e #) ' ' ! Q ,E@5B9?B D85B=135 Q ' 381>>5?B=1... See More ⇒
9.19. Size:252K inchange semiconductor
ipb015n04l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM... See More ⇒
9.20. Size:252K inchange semiconductor
ipb019n06l3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB019N06L3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXI... See More ⇒
9.21. Size:257K inchange semiconductor
ipb015n04n.pdf
Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒
Detailed specifications: IPB026N06N, IPB024N08N5, IPB020N10N5, IPB020N08N5, IPB017N10N5, IPB017N08N5, IPB015N08N5, IPB015N04L, 20N60, IPB011N04L, IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE, IPA80R1K0CE
Keywords - IPB014N06N MOSFET specs
IPB014N06N cross reference
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IPB014N06N replacement
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