IPA80R650CE Todos los transistores

 ..1. Size:1067K  infineon
 ipa80r650ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R650CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R650CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan

 ..2. Size:201K  inchange semiconductor
 ipa80r650ce.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R650CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 7.1. Size:1137K  infineon
 ipa80r600p7.pdf

IPA80R600P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.1. Size:1052K  infineon
 ipa80r460ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R460CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R460CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan

 8.2. Size:1179K  infineon
 ipa80r1k2p7.pdf

IPA80R1K2P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.3. Size:1042K  infineon
 ipa80r1k0ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K0CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan

 8.4. Size:1153K  infineon
 ipa80r900p7.pdf

IPA80R900P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.5. Size:1047K  infineon
 ipa80r1k4ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K4CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan

 8.6. Size:1137K  infineon
 ipa80r750p7.pdf

IPA80R750P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.7. Size:1151K  infineon
 ipa80r280p7.pdf

IPA80R280P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.8. Size:1167K  infineon
 ipa80r360p7.pdf

IPA80R360P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.9. Size:1182K  infineon
 ipa80r1k4p7.pdf

IPA80R1K4P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.10. Size:1045K  infineon
 ipa80r310ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R310CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R310CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan

 8.11. Size:1123K  infineon
 ipa80r450p7.pdf

IPA80R450P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o

 8.12. Size:201K  inchange semiconductor
 ipa80r460ce.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R460CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.13. Size:201K  inchange semiconductor
 ipa80r1k0ce.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R1K0CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.14. Size:201K  inchange semiconductor
 ipa80r1k4ce.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R1K4CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.15. Size:201K  inchange semiconductor
 ipa80r310ce.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA80R310CE FEATURES With TO-220F packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc