IPA80R650CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA80R650CE
Marking Code: 8R650CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220F
IPA80R650CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA80R650CE Datasheet (PDF)
ipa80r650ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R650CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R650CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan
ipa80r650ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa80r600p7.pdf
IPA80R600P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r460ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R460CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R460CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan
ipa80r1k2p7.pdf
IPA80R1K2P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r1k0ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K0CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan
ipa80r900p7.pdf
IPA80R900P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r1k4ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K4CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan
ipa80r750p7.pdf
IPA80R750P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r280p7.pdf
IPA80R280P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r360p7.pdf
IPA80R360P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r1k4p7.pdf
IPA80R1K4P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r310ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R310CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R310CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan
ipa80r450p7.pdf
IPA80R450P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipa80r460ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R460CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa80r1k0ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K0CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa80r1k4ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K4CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa80r310ce.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA80R310CEFEATURESWith TO-220F packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
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