IRFP470 Todos los transistores

 

IRFP470 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP470

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 160 nC

Resistencia drenaje-fuente RDS(on): 0.23 Ohm

Empaquetado / Estuche: TO247

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IRFP470 Datasheet (PDF)

1.1. irfp470.pdf Size:47K _ixys

IRFP470
IRFP470

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A Ω RDS(on) = 0.23 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C24 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 96 A

4.1. irfp4768pbf.pdf Size:329K _upd-mosfet

IRFP470
IRFP470

PD - 97379 IRFP4768PbF HEXFET® Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m Ω l High Speed Power Switching G max. 17.5m Ω l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

4.2. irfp4710pbf.pdf Size:178K _upd-mosfet

IRFP470
IRFP470

PD - 95055 IRFP4710PbF HEXFET® Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014Ω 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

 4.3. irfp4710.pdf Size:103K _international_rectifier

IRFP470
IRFP470

PD - 94361 IRFP4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014? 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Voltage an

4.4. irfp4768.pdf Size:243K _inchange_semiconductor

IRFP470
IRFP470

isc N-Channel MOSFET Transistor IRFP4768,IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Swit

 4.5. irfp4710.pdf Size:243K _inchange_semiconductor

IRFP470
IRFP470

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4710,IIRFP4710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC Converters ·Uninterruptible Power Suppl

Otros transistores... IRFP450FI , IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRF640N , IRFP9130 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 .

 

 
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