Справочник MOSFET. IRFP470

 

IRFP470 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP470

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток |Uds|: 500 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 24 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 160 nC

Время нарастания (tr): 33 ns

Выходная емкость (Cd): 450 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.23 Ohm

Тип корпуса: TO247AD

Аналог (замена) для IRFP470

 

 

IRFP470 Datasheet (PDF)

0.1. irfp470.pdf Size:47K _ixys

IRFP470
IRFP470

IRFP 470 VDSS = 500 VMegaMOSTMFETID (cont) = 24 ARDS(on) = 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C24 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 96 A

0.2. irfp470.pdf Size:334K _inchange_semiconductor

IRFP470
IRFP470

isc N-Channel MOSFET Transistor IRFP470FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 8.1. irfp4768pbf.pdf Size:329K _international_rectifier

IRFP470
IRFP470

PD - 97379IRFP4768PbFHEXFET Power MOSFETDApplicationsVDSS250Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 14.5ml High Speed Power SwitchingGmax. 17.5ml Hard Switched and High Frequency CircuitsID 93ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

8.2. irfp4710pbf.pdf Size:178K _international_rectifier

IRFP470
IRFP470

PD - 95055IRFP4710PbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.014 72Al Motor Controll Uninterruptible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247ACl Fully Charact

 8.3. irfp4710.pdf Size:103K _international_rectifier

IRFP470
IRFP470

PD - 94361IRFP4710HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 72A Motor Control Uninterruptible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247AC Fully Characterized Avalanche Volta

8.4. irfp4768pbf.pdf Size:329K _infineon

IRFP470
IRFP470

PD - 97379IRFP4768PbFHEXFET Power MOSFETDApplicationsVDSS250Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 14.5ml High Speed Power SwitchingGmax. 17.5ml Hard Switched and High Frequency CircuitsID 93ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

 8.5. irfp4710pbf.pdf Size:178K _infineon

IRFP470
IRFP470

PD - 95055IRFP4710PbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.014 72Al Motor Controll Uninterruptible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247ACl Fully Charact

8.6. irfp4768.pdf Size:243K _inchange_semiconductor

IRFP470
IRFP470

isc N-Channel MOSFET Transistor IRFP4768IIRFP4768FEATURESStatic drain-source on-resistance:RDS(on)17.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit

8.7. irfp4710.pdf Size:243K _inchange_semiconductor

IRFP470
IRFP470

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4710IIRFP4710FEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:Vth =3.5 to 5.5 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersUninterruptible Power Suppl

Другие MOSFET... IRFP450FI , IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRF640N , IRFP9130 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 .

 

 
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