IPA60R400CE Todos los transistores

 

IPA60R400CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPA60R400CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-220F
 

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IPA60R400CE Datasheet (PDF)

 ..1. Size:1706K  infineon
ipa60r400ce ipd60r400ce.pdf pdf_icon

IPA60R400CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 ..2. Size:1345K  infineon
ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPA60R400CE

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

 ..3. Size:225K  inchange semiconductor
ipa60r400ce.pdf pdf_icon

IPA60R400CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R400CEFEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:1235K  infineon
ipd60r460ce ipa60r460ce.pdf pdf_icon

IPA60R400CE

IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

Otros transistores... IPA65R099C6 , IPA65R095C7 , IPA65R065C7 , IPA65R045C7 , IPA60R800CE , IPA60R650CE , IPA60R600P6 , IPA60R460CE , K4145 , IPA60R380P6 , IPA60R330P6 , IPA60R280P6 , IPA60R230P6 , IPA60R190P6 , IPA60R160P6 , IPA60R125P6 , IPA60R099P6 .

History: 2N65L-TM3-T | SFB042N100BC3

 

 
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