IPA60R400CE. Аналоги и основные параметры
Наименование производителя: IPA60R400CE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 46 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO-220F
Аналог (замена) для IPA60R400CE
- подборⓘ MOSFET транзистора по параметрам
IPA60R400CE даташит
ipa60r400ce ipd60r400ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R400CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R400CE, IPA60R400CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
ipd60r400ce ips60r400ce ipa60r400ce.pdf
IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica
ipa60r400ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R400CE FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
ipd60r460ce ipa60r460ce.pdf
IPD60R460CE, IPA60R460CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh
Другие IGBT... IPA65R099C6, IPA65R095C7, IPA65R065C7, IPA65R045C7, IPA60R800CE, IPA60R650CE, IPA60R600P6, IPA60R460CE, 2N7002, IPA60R380P6, IPA60R330P6, IPA60R280P6, IPA60R230P6, IPA60R190P6, IPA60R160P6, IPA60R125P6, IPA60R099P6
History: IPD090N03L | IPB06N03LA
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