IPA60R380P6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA60R380P6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 42 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO-220F
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IPA60R380P6 datasheet
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli
ipa60r380p6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R380P6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
ipa60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an
Otros transistores... IPA65R095C7, IPA65R065C7, IPA65R045C7, IPA60R800CE, IPA60R650CE, IPA60R600P6, IPA60R460CE, IPA60R400CE, IRF9540N, IPA60R330P6, IPA60R280P6, IPA60R230P6, IPA60R190P6, IPA60R160P6, IPA60R125P6, IPA60R099P6, IPA50R950CE
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