IPA60R380P6 Datasheet and Replacement
Type Designator: IPA60R380P6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
IPA60R380P6 substitution
IPA60R380P6 Datasheet (PDF)
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli
ipa60r380p6.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa60r380e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an
Datasheet: IPA65R095C7 , IPA65R065C7 , IPA65R045C7 , IPA60R800CE , IPA60R650CE , IPA60R600P6 , IPA60R460CE , IPA60R400CE , IRF1010E , IPA60R330P6 , IPA60R280P6 , IPA60R230P6 , IPA60R190P6 , IPA60R160P6 , IPA60R125P6 , IPA60R099P6 , IPA50R950CE .
History: SSM5P05FU | SUD50N03-12P | 7N65KL-TM3-T | SSM6J207FE | SSM6K406TU | ME6980ED-G | BSC010N04LSI
Keywords - IPA60R380P6 MOSFET datasheet
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History: SSM5P05FU | SUD50N03-12P | 7N65KL-TM3-T | SSM6J207FE | SSM6K406TU | ME6980ED-G | BSC010N04LSI



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