All MOSFET. IPA60R380P6 Datasheet

 

IPA60R380P6 Datasheet and Replacement


   Type Designator: IPA60R380P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F
 

 IPA60R380P6 substitution

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IPA60R380P6 Datasheet (PDF)

 ..1. Size:2739K  infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf pdf_icon

IPA60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 ..2. Size:2540K  infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf pdf_icon

IPA60R380P6

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 ..3. Size:223K  inchange semiconductor
ipa60r380p6.pdf pdf_icon

IPA60R380P6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 5.1. Size:1282K  infineon
ipa60r380e6.pdf pdf_icon

IPA60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

Datasheet: IPA65R095C7 , IPA65R065C7 , IPA65R045C7 , IPA60R800CE , IPA60R650CE , IPA60R600P6 , IPA60R460CE , IPA60R400CE , IRF1010E , IPA60R330P6 , IPA60R280P6 , IPA60R230P6 , IPA60R190P6 , IPA60R160P6 , IPA60R125P6 , IPA60R099P6 , IPA50R950CE .

History: SSM5P05FU | SUD50N03-12P | 7N65KL-TM3-T | SSM6J207FE | SSM6K406TU | ME6980ED-G | BSC010N04LSI

Keywords - IPA60R380P6 MOSFET datasheet

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