IPA60R125P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA60R125P6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO-220F

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IPA60R125P6 Datasheet (PDF)

..1. Size:2729K infineon
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

..2. Size:2788K infineon
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf

..3. Size:245K inchange semiconductor
ipa60r125p6.pdf

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6FEATURESDrain-source on-resistance:RDS(on) 0.125 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

5.1. Size:557K infineon
ipa60r125cp.pdf

IPA60R125CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@DS on Y 0.125 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

5.2. Size:1105K infineon
ipa60r125cfd7.pdf

IPA60R125CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

5.3. Size:1257K infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

5.4. Size:201K inchange semiconductor
ipa60r125cp.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

5.5. Size:205K inchange semiconductor
ipa60r125c6.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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