IPA60R125P6
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA60R125P6
Marking Code: 6R125P6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125
Ohm
Package:
TO-220F
IPA60R125P6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA60R125P6
Datasheet (PDF)
..1. Size:2729K infineon
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf 
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
..2. Size:2788K infineon
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
..3. Size:245K inchange semiconductor
ipa60r125p6.pdf
isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6FEATURESDrain-source on-resistance:RDS(on) 0.125 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
5.1. Size:557K infineon
ipa60r125cp.pdf
IPA60R125CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@DS on Y 0.125 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound
5.2. Size:1105K infineon
ipa60r125cfd7.pdf
IPA60R125CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such
5.3. Size:1257K infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj
5.4. Size:201K inchange semiconductor
ipa60r125cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
5.5. Size:205K inchange semiconductor
ipa60r125c6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25
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