IPA50R950CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R950CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R950CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R950CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

TypeIPA50R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DPackage @Tjmax 550 V"1 W *EM;IJ

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R650CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R650CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IPA50R140CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 W 4EHB:M?:; 8;IJ / ?D 1, DS(on)R 0.140 DS(on) maxW )EM;IJ

IPA50R350CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M ., + g 0. 50 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI 1, #JAA - (0)V . J6iified 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C

IPA50R399CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 0) 1, #JAA - (V . J6Ai;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R800CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R800CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IPA50R199CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V!0W)EM;IJ

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R280CEData SheetRev. 2.2FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R280CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IPA50R190CEMOSFETPG-TO 220 FP500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

IPA50R299CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 1, #-0)V . J6>A;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C

IPA50R250CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V"1X*FNLI

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R500CEData SheetRev. 2.0FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R500CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R520CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA50R650CEFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R140CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R350CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R399CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R800CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R199CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R280CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R190CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R299CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R250CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R380CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R500CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING