Справочник MOSFET. IPA50R950CE

 

IPA50R950CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPA50R950CE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.9 ns
   Cossⓘ - Выходная емкость: 19 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для IPA50R950CE

 

 

IPA50R950CE Datasheet (PDF)

 ..1. Size:1347K  infineon
ipa50r950ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R950CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R950CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

 ..2. Size:201K  inchange semiconductor
ipa50r950ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R950CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.1. Size:2210K  infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

 8.2. Size:546K  infineon
ipa50r520cp.pdf

IPA50R950CE
IPA50R950CE

TypeIPA50R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DPackage @Tjmax 550 V"1 W *EM;IJ

 8.3. Size:1342K  infineon
ipa50r650ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R650CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R650CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

 8.4. Size:604K  infineon
ipa50r140cp.pdf

IPA50R950CE
IPA50R950CE

IPA50R140CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 W 4EHB:M?:; 8;IJ / ?D 1, DS(on)R 0.140 DS(on) maxW )EM;IJ

 8.5. Size:578K  infineon
ipa50r350cp.pdf

IPA50R950CE
IPA50R950CE

IPA50R350CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M ., + g 0. 50 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI 1, #JAA - (0)V . J6iified 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C

 8.6. Size:561K  infineon
ipa50r399cp.pdf

IPA50R950CE
IPA50R950CE

IPA50R399CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 0) 1, #JAA - (V . J6Ai;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C

 8.7. Size:1351K  infineon
ipa50r800ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R800CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R800CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

 8.8. Size:327K  infineon
ipa50r199cp.pdf

IPA50R950CE
IPA50R950CE

IPA50R199CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V!0W)EM;IJ

 8.9. Size:1356K  infineon
ipa50r280ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R280CEData SheetRev. 2.2FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R280CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

 8.10. Size:971K  infineon
ipa50r190ce.pdf

IPA50R950CE
IPA50R950CE

IPA50R190CEMOSFETPG-TO 220 FP500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 8.11. Size:552K  infineon
ipa50r299cp.pdf

IPA50R950CE
IPA50R950CE

IPA50R299CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 1, #-0)V . J6>A;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C

 8.12. Size:323K  infineon
ipa50r250cp.pdf

IPA50R950CE
IPA50R950CE

IPA50R250CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V"1X*FNLI

 8.13. Size:2917K  infineon
ipa50r380ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

 8.14. Size:1327K  infineon
ipa50r500ce.pdf

IPA50R950CE
IPA50R950CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R500CEData SheetRev. 2.0FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R500CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

 8.15. Size:200K  inchange semiconductor
ipa50r520cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R520CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.16. Size:201K  inchange semiconductor
ipa50r650ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA50R650CEFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 8.17. Size:200K  inchange semiconductor
ipa50r140cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R140CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.18. Size:200K  inchange semiconductor
ipa50r350cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R350CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.19. Size:201K  inchange semiconductor
ipa50r399cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R399CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.20. Size:201K  inchange semiconductor
ipa50r800ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R800CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.21. Size:201K  inchange semiconductor
ipa50r199cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R199CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.22. Size:201K  inchange semiconductor
ipa50r280ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R280CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.23. Size:201K  inchange semiconductor
ipa50r190ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R190CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.24. Size:201K  inchange semiconductor
ipa50r299cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R299CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.25. Size:201K  inchange semiconductor
ipa50r250cp.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R250CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.26. Size:201K  inchange semiconductor
ipa50r380ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R380CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 8.27. Size:201K  inchange semiconductor
ipa50r500ce.pdf

IPA50R950CE
IPA50R950CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R500CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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